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Harris - Monolithic Diode 0104 - 0410

These devices are designed with the CMOS circuit engineer in mind, allowing the application of logically powerful programmable solutions to low power CMOS system applications. They incorporate an advanced dielectric isolation process to eliminate the need for power supply pins and allow parasitic free operation.

Original # Lansdale # PDF
HM-0104 HL0104  
HM-0186 HL0186  
HM-0410 HL0410  
Package Types
J - 24-LEAD DUAL INLINE (1/2" X 1 1/4")
K - 24-LEAD FLAT PACK (3/8" X 5/8")
Rating Value Unit
Surge Current (100 Ás Max.) 200 mA
Total Circuit Dissipation (Still Air) 450 mW
Storage Temperature Range -65 to +150 ° C
Operating Temperature Range -55 to +125 ° C
FUNCTION TYPE/PKG Forward Current Reverse Breakdown Voltage
8 X 6 Diode Matrix  0186/C,D  100  30 
4 X 10 Diode Matrix  0410/C,D  100  30 
10 X 4 Diode Matrix  0104/C,D  100  30 
       

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